The objectives of this study are two-fold. One is to develop a very general large-scale computer simulation model for semiconductor devices. The other is to simulate various Si avalanche diode structures operating in the IMPATT and TRAPATT modes at different operating conditions in order to investigate the effects of various parameters on the performance of these avalanche diodes.
An extensive simulation of the IMPATT mode of operation of two X-band Read-type diodes, ten X-band low-high-low diodes, four X-band one-sided abrupt diodes and two K-band realistic p-n junction diodes had been conducted for different bias current densities, frequencies, RF voltages and temperatures. The effects of various device parameters and operating conditions on diode performance have been investigated and discussed. A set of general guidelines for designing Si IMPATT diodes is presented. Simulations have also been done for the TRAPATT mode of operation of fourteen Si avalanche-diode structures at different frequencies and bias current densities. Effects of various device parameters and operating conditions on RF performance have been studied and discussed.
This book is written for the Undergraduate, Postgraduate and Doctoral students specializing in Microwave and Millimeter wave Avalanche Transit Time Devices and Oscillators. This book provides a clear insight of the device Physics and its application in Oscillator circuits. The main features of this book are Modelling and simulation of IMPATT Devices, their fabrication and characterization and high frequency limitation. A separate chapter is devoted on IMPATT Oscillator and amplifier. Finally the emerging application of the device as a potential Terahertz source is included to generate interest to the researchers working in this field.
We have reached the double conclusion: that invention is choice, that this choice is imperatively governed by the sense of scientific beauty. Hadamard (1945), Princeton University Press, by permission. The great majority of all sources and amplifiers of microwave energy, and all devices for receiving or detecting microwaves, use a semiconductor active element. The development of microwave semiconductor devices, de scribed in this book, has proceeded from the simpler, two-terminal, devices such as GUNN or IMPATT devices, which originated in the 1960s, to the sophisticated monolithic circuit MESFET three-terminal active elements, of the 1980s and 1990s. The microwave field has experienced a renais sance in electrical engineering departments in the last few years, and much of this growth has been associated with microwave semiconductor devices. The University of Massachusetts has recently developed a well recognized program in microwave engineering. Much of the momentum for this pro gram has been provided by interaction with industrial companies, and the influx of a large number of industry-supported students. This program had a need for a course in microwave semiconductor devices, which covered the physical aspects, as well as the aspects of interest to the engineer who incorporates such devices in his designs. It was also felt that it would be im portant to introduce the most recently developed devices (HFETs, HBTs, and other advanced devices) as early as possible.
The theoretical analysis of gallium arsenide avalanche transit time devices has been presented. This analysis has established the criteria for optimum design of oscillators and amplifiers and has led to the application of these devices in Army communications and radar systems. (Author).